Section 5 of conference “Current trends of radiophysics” is held in presentation hall of TSU Scientific Library.

With its report “The effects of a stepped surface of the Si (100) on the nucleation of Ge” stands Esin Mikhail.

Together with his scientific colleagues, he worked out a technique for controlling the formation of diatomic steps by the DBE method of Si-sub-homoepitaxy on a Si (100) substrate deflected from the (111) plane by an angle of 0.4°.